The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Feb. 06, 2006
Sumiko Domae, Yokohama, JP;
Daisaburo Takashima, Yokohama, JP;
Sumiko Domae, Yokohama, JP;
Daisaburo Takashima, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A unit cell is composed of a memory cell transistor and a ferroelectric storage element connected in parallel between a source and a drain of the memory cell transistor. A memory cell block is composed of a plurality of unit cells connected in series. One end of the memory cell block is connected to a bit line via a block selecting transistor. The other end of the memory cell block is connected to a plate line. A redundancy unit cell is composed of a redundancy cell transistor and a ferroelectric storage element connected in parallel between a source and a drain of the redundancy cell transistor. A redundancy memory cell block is composed of a plurality of unit cells connected in series, the number of which is smaller than that of the unit cells in the memory cell block.