The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2007

Filed:

Nov. 24, 2004
Applicants:

Hisaki Fujitani, Kyoto, JP;

Fumito Itou, Ibaraki, JP;

Toshitaka Akahoshi, Kyoto, JP;

Toshiyuki Fukuda, Nagaokakyo, JP;

Inventors:

Hisaki Fujitani, Kyoto, JP;

Fumito Itou, Ibaraki, JP;

Toshitaka Akahoshi, Kyoto, JP;

Toshiyuki Fukuda, Nagaokakyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A first semiconductor element and second semiconductor element are bonded via die-bonding material. A first electrode of the first semiconductor element and a third electrode are joined, by means of flip-chip bonding, to a semiconductor carrier that has the third electrode on the one face of the semiconductor carrier and a fourth electrode on the perimeter of the other face of the semiconductor carrier. The bonding pad of the second semiconductor element and the fourth electrode of the semiconductor carrier are connected via fine metal wire by means of wire bonding. The periphery of the first semiconductor element and the wiring portion of the fine metal wire are filled with insulating sealing resin between the semiconductor carrier and second semiconductor element and the sealing fill region for the sealing resin is formed substantially the same as the external dimensions of the second semiconductor element.


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