The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Mar. 11, 2004
Applicants:
Syuji Asano, Nukata-gun, JP;
Yoshiaki Nakayama, Okazaki, JP;
Koji Eguchi, Kariya, JP;
Inventors:
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A wire () is formed on an insulating film () on a semiconductor substrate (). The wire () is covered by silicon nitride film (), inorganic SOG film () and TEOS film (). A thin film resistance element () of chromium silicon (CrSi) is formed on the upper surface of the TEOS film (). The acute angle (taper angle) at which a line connecting the local maximum and minimum points of a step on the upper surface of the TEOS film () beneath the area where the thin film resistance element () is formed intersects to the surface of the substrate () is set to 10° or less.