The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7297993 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 20, 2007

Filed:

Jul. 12, 2005
Applicant:

Junichiro Kobayashi, Kanagawa, JP;

Inventor:

Junichiro Kobayashi, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
Abstract

A bipolar transistor having a base electrode of an air bridge structure is simplified in structure and enhanced in the degree of freedom of a contact position of a base wiring line with the base electrode. The bipolar transistor has a semiconductor mesa portion having a base layer formed on an upper face thereof, and a base electrode contacts with the base layer and has a floating extension which extends from the semiconductor mesa portion to a space on the outer side with respect to the semiconductor mesa portion. The floating extension is used as a contact portion for a base wiring line to the base electrode.


Find Patent Forward Citations

Kobayashi, Junichiro. (2007). Bipolar transistor and fabrication method of the same (U.S. Patent No. 7297993). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7297993

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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