The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Jul. 30, 2004
Applicants:
Paul R. Berger, Columbus, OH (US);
Phillip E. Thompson, Springfield, VA (US);
Niu Jin, Columbus, OH (US);
Inventors:
Paul R. Berger, Columbus, OH (US);
Phillip E. Thompson, Springfield, VA (US);
Niu Jin, Columbus, OH (US);
Assignee:
The Ohio State University, Columbus, OH (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon-based interband tunneling diode () includes a degenerate p-type doping () of acceptors, a degenerate n-type doping () of donors disposed on a first side of the degenerate p-type doping (), and a barrier silicon-germanium layer () disposed on a second side of the degenerate p-type doping () opposite the first side. The barrier silicon-germanium layer () suppresses diffusion of acceptors away from a p/n junction defined by the degenerate p-type and n-type dopings ().