The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Dec. 28, 2005
Seung Wan Chae, Kyungki-do, KR;
Suk Kil Yoon, Kyungki-do, KR;
Kun Yoo Ko, Kyungki-do, KR;
Hyun Wook Shim, Kyungki-do, KR;
Bong IL Yi, Kyungki-do, KR;
Seung Wan Chae, Kyungki-do, KR;
Suk Kil Yoon, Kyungki-do, KR;
Kun Yoo Ko, Kyungki-do, KR;
Hyun Wook Shim, Kyungki-do, KR;
Bong Il Yi, Kyungki-do, KR;
Samsung Electro-Mechanics Co., Ltd., Suwon, Kyungki-Do, KR;
Abstract
The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.