The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Feb. 17, 2006
Melanie W. Cole, Churchville, MD (US);
Timothy P. Weihs, Baltimore, MD (US);
Melanie W. Cole, Churchville, MD (US);
Timothy P. Weihs, Baltimore, MD (US);
United States of America as Represented by the Secretary of the Army, Washington, DC (US);
Abstract
A NiSi-nSiC Ohmic contact is formed by pulsed laser ablation deposition (PLD) of NiSi source target deposited on a n-SiC substrate or SiC substrate wafer with SiC epilayer. The NiSi Ohmic contact on n-SiC was rapid thermal annealed at 950° C. for 30 s in a Nambient. The resultant Ohmic contact is characterized by excellent current-voltage (I-V) characteristics, an abrupt void free contact-SiC interface, retention of the PLD as-deposited contact layer width, smooth surface morphology, and absence of residual carbon within the contact layer or at the interface. The detrimental effects of contact delamination due to stress associated with interfacial voiding; and wire bond failure, non-uniformity of current flow and SiC polytype alteration due to extreme surface roughness; have been eliminated as has electrical instability associated with carbon inclusions at the contact-SiC interface, after prolonged high temperature and power device operation.