The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2007

Filed:

Sep. 26, 2003
Applicants:

Afshin Ziaei, Vanves, FR;

Thierry Dean, Gif sur Yvette, FR;

Jean-philippe Polizzi, Palaiseau, FR;

Inventors:

Afshin Ziaei, Vanves, FR;

Thierry Dean, Gif sur Yvette, FR;

Jean-Philippe Polizzi, Palaiseau, FR;

Assignee:

Thales, Neuilly-sur-Seine, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The field of the invention is that of microsystems of the electrostatically actuated microswitch type that are used in electronics to carry out switching functions, especially in the microwave field for mobile telephony and radars. The object of the invention is to improve the performance of the switch by reducing the response time of the device and by increasing the radiofrequency or microwave power supported, while still maintaining low switching voltages. This improved performance is obtained by using thick membranes and by placing a material of high relative permittivity between said membrane and the associated electrode. The switch is obtained by a novel production process, the membrane being produced on an independent substrate and then joined to the base substrate of the switch. Examples of processes for producing devices according to the invention with the materials that can be used, the possible geometries and the various production steps are given.


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