The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Feb. 21, 2002
Hoki Kwon, Plymouth, MN (US);
Hoki Kwon, Plymouth, MN (US);
Finisar Corporation, Sunnyvale, CA (US);
Abstract
GaAsSblayers are grown by MOCVD. For lattice matching with InP, x is set to 0.5, while beneficial alternatives include setting x to 0.23, 0.3, and 0.4. During MOVCD, TMGa (or TEGa), TMSb, and AsH(or TBAs) are used to fabricate the GaAsSblayer. Beneficially, the GaAsSbx layer's composition is controlled by the ratio of As to Sb. The MOCVD growth temperature is between 500° C. and 650° C. The GaAsSblayer is beneficially doped using CClor CBr. A heavily doped GaAsSblayer can be used to form a tunnel junction with n-doped layers of InP, AlInAs, or with lower bandgap materials such as AlInGaAs or InGaAsP. Such tunnel junctions are useful for producing long wavelength VCSELs.