Semiconductor memory device and method for writing data into the semiconductor memory device

Abstract

A semiconductor memory device comprises a wordline (), a first bitline (), two second bitlines (), a first memory cell () and a second memory cell (). The first memory cell () is coupled to the wordline (), one of the second bitlines () and the first bitline (). The second memory cell () is coupled to the wordline (), the other second bitline () and the first bitline (). Each memory cell () stores a first bit () and a second bit (). The semiconductor device further comprises a programming unit () coupled to the wordline () and the first and the second bitlines (). The programming unit () enables to apply a first programming potential (V) to the wordline () and to apply a third programming potential (V) to the second bitlines () while applying a second programming potential (V) to the first bitline () in order to program the first bit () of the second memory cell () and the second bit () of the first memory cell ().