Use of recovery transistors during write operations to prevent disturbance of unselected cells

Abstract

A memory array and method for performing a write operation in a memory array that eliminates parasitic coupling between selected and unselected bitlines and protects memory cells on unselected bitlines. A memory array has a plurality of memory cells, each of which is coupled to a unique array bitline. A unique recovery transistor is coupled to each array bitline. The recovery transistors on odd bitlines are coupled to a first and second voltage, while the recovery transistors on even bitlines are coupled to a first and third voltage. During a write operation, each recovery transistor coupled to an unselected bitline is active during a write operation and a recovery operation, while each recovery transistor coupled to a selected bitline is active during a recovery operation. The first voltage is sufficient to prevent parasitic coupling between the selected bitlines and the unselected bitlines during the write operation.