The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Sep. 30, 2005
Sunhom Paak, San Jose, CA (US);
Boon Yong Ang, Cupertino, CA (US);
Hsung Jai Im, Cupertino, CA (US);
Daniel Gitlin, Palo Alto, CA (US);
Sunhom Paak, San Jose, CA (US);
Boon Yong Ang, Cupertino, CA (US);
Hsung Jai Im, Cupertino, CA (US);
Daniel Gitlin, Palo Alto, CA (US);
Xilinx, Inc., San Jose, CA (US);
Abstract
An electrically erasable programmable read-only memory ('CMOS NON-VOLATILE MEMORY') cell is fabricated using standard CMOS fabrication processes. First and second polysilicon gates are patterned over an active area of the cell between source and drain regions. Thermal oxide is grown on the polysilicon gates to provide an isolating layer. Silicon nitride is deposited between the first and second polysilicon gates to form a lateral programming layer.