The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Feb. 02, 2005
Takahiro Korenari, Tokyo, JP;
Kenji Sera, Tokyo, JP;
Hiroshi Kanou, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
At least either above or below a memory transistor formed on an insulating substrate, a shielding layer which has an area larger than that of the semiconductor layer of the memory transistor and has either an electromagnetic wave shielding effect or a light shielding effect or both of these is provided, and by this shielding layer, electromagnetic waves or light is prevented from entering the semiconductor layer. Or, the regional area of at least one of the gate and the charge accumulation layer of the memory transistor is made larger than the semiconductor layer to prevent electromagnetic waves or light from entering the semiconductor layer by the gate or the charge accumulation layer.