The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7294876 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 13, 2007

Filed:

Jan. 03, 2006
Applicants:

Heung-jin Joo, Gyeonggi-do, KR;

Bon-jae Koo, Gyeonggi-do, KR;

Jung-hoon Park, Gyeonggi-do, KR;

Inventors:

Heung-Jin Joo, Gyeonggi-do, KR;

Bon-Jae Koo, Gyeonggi-do, KR;

Jung-Hoon Park, Gyeonggi-do, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract

An embodiment of the FeRAM includes a ferroelectric capacitor including a bottom electrode, a ferroelectric layer, and a top electrode. Strontium ruthenium oxide is formed between the bottom electrode and the ferroelectric layer and between the ferroelectric layer and the top electrode. A diffusion barrier layer including strontium ruthenium oxide and iridium is formed between the top electrode and a direct cell contact plug coupled to a plate line interconnecting top electrodes of ferroelectric capacitors. Thus, diffusion of nitrogen or metallic materials produced in subsequent processes is suppressed to prevent degradation of the ferroelectric layer.


Find Patent Forward Citations

Joo, Heung-Jin. (2007). Feram device and method for manufacturing the same (U.S. Patent No. 7294876). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7294876

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