The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Mar. 09, 2006
Jonathan J. Wierer, Jr., Fremont, CA (US);
Michael R. Krames, Mountain View, CA (US);
Mihail M. Sigalas, Santa Clara, CA (US);
Jonathan J. Wierer, Jr., Fremont, CA (US);
Michael R. Krames, Mountain View, CA (US);
Mihail M. Sigalas, Santa Clara, CA (US);
Philips Lumileds Lighting Company, LLC, San Jose, CA (US);
Avago Technologies General IP Pte. Ltd., Singapore, SG;
Abstract
A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.