The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Sep. 12, 2006
Hong-ki Kim, Kyunggi-do, KR;
Ho-kyu Kang, Yongin-shi, KR;
Moon-han Park, Yongin-shi, KR;
Myong-geun Yoon, Seoul, KR;
Seok-jun Won, Seoul, KR;
Yong-kuk Jeong, Seoul, KR;
Kyung-hun Kim, Kyunggi-do, KR;
Hong-Ki Kim, Kyunggi-do, KR;
Ho-Kyu Kang, Yongin-shi, KR;
Moon-Han Park, Yongin-shi, KR;
Myong-Geun Yoon, Seoul, KR;
Seok-Jun Won, Seoul, KR;
Yong-Kuk Jeong, Seoul, KR;
Kyung-Hun Kim, Kyunggi-do, KR;
Samsung Electronics Co. Ltd., , KR;
Abstract
A capacitor includes an upper electrode formed by physical vapor deposition and chemical vapor deposition. The upper electrode of the capacitor may include a first upper electrode formed by chemical vapor deposition and a second upper electrode formed by physical vapor deposition. Alternatively, the upper electrode may include a first upper electrode formed by physical vapor deposition and a second upper electrode formed by chemical vapor deposition. The upper electrode of the capacitor is formed through two steps using chemical vapor deposition and physical vapor deposition. Therefore, the upper electrode can be thick and rapidly formed, whereby electrical characteristics of the upper electrode are not deteriorated.