The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Dec. 29, 2004
Applicant:
Woo-young SO, Suwon-si, KR;
Inventor:
Woo-Young So, Suwon-si, KR;
Assignee:
Samsung SDI Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a thin film transistor with multiple gates uses a super grain silicon (SGS) crystallization process. The thin film transistor includes a semiconductor layer having a zigzag shape formed on an insulating substrate, and a gate electrode that overlaps the semiconductor layer. The semiconductor layer includes a high-angle grain boundary formed during the SGS crystallization process in a portion of the semiconductor layer that is not overlapped by the gate electrode.