The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Dec. 06, 2004
Wei-kuo Chen, Hsinchu, TW;
Ming-chih Lee, Hsinchu, TW;
Wu-ching Chou, Houlong Township, Miaoli County, TW;
Wen-hsiung Chen, Hsinchu, TW;
Wen-cheng KE, Yuanli Township, Miaoli County, TW;
Wei-Kuo Chen, Hsinchu, TW;
Ming-Chih Lee, Hsinchu, TW;
Wu-Ching Chou, Houlong Township, Miaoli County, TW;
Wen-Hsiung Chen, Hsinchu, TW;
Wen-Cheng Ke, Yuanli Township, Miaoli County, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
Process for fabricating self-assembled nanoparticles on buffer layers without mask making and allowing for any degree of lattice mismatch; that is, binary, ternary or quaternary nanoparticles comprising Groups III-V, II-VI or IV-VI. The process includes a first step of applying a buffer layer, a second step of turning on the purge gas to modulate the first reactant to the lower first flow rate, then the second reactant is supplied to the buffer layer to form a metal-rich island on the buffer layer, and a third step of turning on purge gas again to modulate the first reactant to the higher second flow rate onto the buffer layer. On the metal-rich island is formed the nanoparticles of the binary, ternary or quaternary III-V, II-VI and IV-IV semiconductor material. This is then recrystallized under the first reactant flow at high temperature forming high quality nanoparticles.