The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2007
Filed:
Jun. 16, 2005
Kenya Watanabe, Nagano, JP;
Kenya Watanabe, Nagano, JP;
Seiko Epson Corporation, , JP;
Abstract
A ferroelectric memory device is characterized in having a first n-type MOS transistor having a gate connected to a word line, a ferroelectric capacitor having one end connected through the first n-type MOS transistor to a bit line, and another end connected to a plate line, and a plate line control circuit that drives the plate line, wherein the plate line control circuit includes an inverter having a first p-type MOS transistor and a second n-type MOS transistor, and an output terminal connected to the plate line, a voltage source that supplies a voltage to be supplied to a source of the first p-type MOS transistor, and a third n-type MOS transistor provided between the voltage source and the output terminal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile