The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2007
Filed:
Oct. 05, 2006
Ryoichi Nakatani, Akigawa, JP;
Masahiro Kitada, Tokyo, JP;
Hisashi Takano, Hachioji, JP;
Hideo Tanabe, Higashimurayama, JP;
Noboru Shimizu, Tokorozawa, JP;
Ryoichi Nakatani, Akigawa, JP;
Masahiro Kitada, Tokyo, JP;
Hisashi Takano, Hachioji, JP;
Hideo Tanabe, Higashimurayama, JP;
Noboru Shimizu, Tokorozawa, JP;
Hitachi Global Storage Technologies Japan, Ltd., Odawara-shi, unknown;
Abstract
The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.