The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2007
Filed:
Dec. 19, 2003
Applicants:
Takenori Osada, Ichihara, JP;
Takayuki Inoue, Sodegaura, JP;
Noboru Fukuhara, Tsukuba, JP;
Inventors:
Assignees:
Sumitomo Chemical Company, Limited, Tokyo, JP;
Sumika Epi Solution Company, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A compound semiconductor epitaxial substrate for use in a strain channel high electron mobility field effect transistor, comprising an InGaAs layer as a strain channel layerand AlGaAs layers containing n-type impurities as back side and front side electron supplying layersand, wherein an emission peak wavelength from the strain channel layerat 77 K is set to 1030 nm or more by optimizing the In composition and the thickness of the strain channel layer