The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2007
Filed:
Sep. 28, 2005
Masanori Kojima, Aichi-ken, JP;
Minoru Hirose, Aichi-ken, JP;
Masao Kamiya, Aichi-ken, JP;
Kosuke Yahata, Aichi-ken, JP;
Masanori Kojima, Aichi-ken, JP;
Minoru Hirose, Aichi-ken, JP;
Masao Kamiya, Aichi-ken, JP;
Kosuke Yahata, Aichi-ken, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-Gun, Aichi-Ken, JP;
Abstract
A flip-chip type of Group III nitride based compound semiconductor light-emitting device comprises a transparent conductive filmmade of ITO on a p-type contact layer. On the transparent conductive film, an insulation protection filma reflection filmwhich is made of silver (Ag) and aluminum (Al) and reflects light to a sapphire substrate side, and a metal layermade of gold (Au) are deposited in sequence. Because the insulation protection filmexists between the transparent conductive filmand the reflection filmmetal atoms comprised in the reflection filmcan be prevented from diffusing in the transparent conductive filmThat enables the transparent conductive filmto maintain high transmissivity. As a result, a light-emitting device having high external quantum efficienty can be provided.