Method of manufacturing a ferroelectric device

Abstract

The invention relates to a ferroelectric device () with a body () comprising a substrate () and a ferroelectric layer () provided with a connection conductor () on a side facing away from the substrate (), which ferroelectric layer contains an oxygen-free ferroelectric material () and is used to form an active electrical element (), in particular a memory element (). Such a device forms an attractive non-volatile memory device. In accordance with the invention, a conductive layer () is present between the substrate () and the ferroelectric layer (), which conductive layer forms a further connection conductor () of the ferroelectric layer (), and the active electrical element () is obtained as a result of the fact that the ferroelectric layer () forms a Schottky junction with at least one of the connection conductors (). In practice it has been found that such a device () comprises a well-performing memory element () that can be readily formed on a, preferably monocrystalline, silicon substrate (). Preferably, the device () further comprises a field effect transistor (), and the element () is preferably situated above the source or drain region () of the transistor (). The active element also may function as a diode.