The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2007

Filed:

Oct. 25, 2005
Applicants:

Philippe Candelier, St-Mury-Monteymond, FR;

Jean Lasseuguette, Grenoble, FR;

Richard Fournel, Lubin, FR;

Inventors:

Philippe Candelier, St-Mury-Monteymond, FR;

Jean Lasseuguette, Grenoble, FR;

Richard Fournel, Lubin, FR;

Assignee:

STMicroelectronics SA, Montrouge, FR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory cell of the SRAM type is provided that is capable of storing one datum in a non-volatile manner. The memory cell includes two inverters (and) configured as a flip-flop for storing one bit. Each inverter includes a transistor (or) of a first type and a transistor (or) of a second type. The concentration of carriers in the conduction channel of the transistor () of the first type of one of the inverters () is different from the concentration of carriers in the conduction channel of the transistor () of the first type of the other inverter () so that the inverters have different threshold voltages.


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