The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2007
Filed:
Dec. 16, 2003
Applicants:
Richard M. Fastow, Cupertino, CA (US);
Chi Chang, Redwood City, CA (US);
Sheung Hee Park, Pleasanton, CA (US);
Inventors:
Richard M. Fastow, Cupertino, CA (US);
Chi Chang, Redwood City, CA (US);
Sheung Hee Park, Pleasanton, CA (US);
Assignee:
Spansion LLC, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory cell and a method of forming the same are described. The memory cell is formed on a substrate. The memory cell includes a floating gate that is formed at least in part within the substrate. A bit line region is formed within the substrate in proximity to the floating gate. Because of the configuration of the bit line and the floating gate, memory cells can be located closer to each other, increasing the density of memory cells in a memory array.