The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2007

Filed:

Jan. 31, 2001
Applicants:

John Haig Marsh, Glasgow, GB;

Simon Eric Hicks, Paisley, GB;

James Stewart Aitchison, Toronto, CA;

Stewart Duncan Mcdougall, Hazelbank, GB;

BO Cang Qiu, Glasgow, GB;

Inventors:

John Haig Marsh, Glasgow, GB;

Simon Eric Hicks, Paisley, GB;

James Stewart Aitchison, Toronto, CA;

Stewart Duncan McDougall, Hazelbank, GB;

Bo Cang Qiu, Glasgow, GB;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An improved integrated optical device (-) is disclosed containing first and second devices (-), optically coupled to each other and formed in first and second different material systems. One of the first or second devices (-) has a Quantum Well Intermixed (QWI) region () at or adjacent a coupling region between the first and second devices (-). The first material system may be a III-V semiconductor based on Gallium Arsenide (GaAs) or Indium Phosphide (InP), while the second material may be Silica (SiO), Silicon (Si), Lithium Niobate (LiNbO), a polymer, or glass.


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