The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2007
Filed:
Feb. 07, 2006
Applicants:
Thierry Barge, Grenoble, FR;
André Auberton-herve, St. Egreve, FR;
Hiroji Aga, Annaka Gunma, JP;
Naoto Tate, Annaka Gunma, JP;
Inventors:
Thierry Barge, Grenoble, FR;
André Auberton-Herve, St. Egreve, FR;
Hiroji Aga, Annaka Gunma, JP;
Naoto Tate, Annaka Gunma, JP;
Assignee:
S.O.O.Tec Silicon on Insulator Technologies, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for treating substrates for the microelectronics or optoelectronics industry, wherein the substrates include on at least one of their faces a working layer in which components are intended to be formed. The process includes a step of annealing under a reductive atmosphere followed by a step of chemical-mechanical polishing on the free surface of the working layer.