The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2007

Filed:

Jul. 08, 2005
Applicants:

Jae Chang Jung, Seoul, KR;

Cheol Kyu Bok, Icheon, KR;

Sam Young Kim, Icheon, KR;

Chang Moon Lim, Icheon, KR;

Seung Chan Moon, Yongin, KR;

Inventors:

Jae Chang Jung, Seoul, KR;

Cheol Kyu Bok, Icheon, KR;

Sam Young Kim, Icheon, KR;

Chang Moon Lim, Icheon, KR;

Seung Chan Moon, Yongin, KR;

Assignee:

Hynix Semiconductor Inc., Kyoungki-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/095 (2006.01); G03F 7/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein is a top anti-reflective coating composition which comprises a photoacid generator represented by Formula 1 below. Since the top anti-reflective coating composition dissolves a portion of a photoacid generator present at the top of an underlying photosensitizer, particularly, upon formation of a top anti-reflective coating, it can prevent the top from being formed into a thick section. Therefore, the use of the anti-reflective coating composition enables the formation of a vertical pattern on a semiconductor device.


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