The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2007
Filed:
Apr. 17, 2003
Yoon-ho Khang, Seoul, KR;
Yoon-ho Khang, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, Kyungki-do, KR;
Abstract
A method of crystallizing amorphous silicon, wherein the method includes supplying nanoparticles over a surface of an amorphous silicon layer; intermittently melting nanoparticles that reach the surface of the amorphous silicon layer while supplying the nanoparticles; and cooling the amorphous silicon layer to grow crystals using unmolten nanoparticles as crystal seeds, thereby forming a polysilicon layer. Externally supplied nanoparticles are used as crystal seeds to crystallize an amorphous silicon layer so that large grains can be formed. Accordingly, since the number and size of nanoparticles may be controlled, the size and arrangement of grains may also be controlled.