The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2007

Filed:

Sep. 25, 2003
Applicants:

Yukio Ide, Mishima, JP;

Hiroko Iwasaki, Tokyo, JP;

Yoshiyuki Kageyama, Yokohama, JP;

Yujiro Kaneko, Machida, JP;

Katsuyuki Yamada, Mishima, JP;

Michiaki Shinotsuka, Hiratsuka, JP;

Makoto Harigaya, Hiratsuka, JP;

Hiroshi Deguchi, Yokohama, JP;

Inventors:

Yukio Ide, Mishima, JP;

Hiroko Iwasaki, Tokyo, JP;

Yoshiyuki Kageyama, Yokohama, JP;

Yujiro Kaneko, Machida, JP;

Katsuyuki Yamada, Mishima, JP;

Michiaki Shinotsuka, Hiratsuka, JP;

Makoto Harigaya, Hiratsuka, JP;

Hiroshi Deguchi, Yokohama, JP;

Assignee:

Ricoh Company, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B22F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A sputtering target contains a target material including as constituent elements Ag, In, Te and Sb with the respective atomic percents (atom. %) of α, β, γ and δ thereof being in the relationship of 0.5≦α<8, 5≦γ≦23, 17≦γ≦38, 32≦δ≦73, α≦γ, and α+β+γ+δ=100, and a method of producing the above sputtering target is provided.


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