The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2007
Filed:
Jul. 02, 2004
Yasuo Kitaoka, Ibaraki, JP;
Hisashi Minemoto, Hirakata, JP;
Isao Kidoguchi, Kawanishi, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Katano, JP;
Fumio Kawamura, Minoh, JP;
Masanori Morishita, Ibaraki, JP;
Yasuo Kitaoka, Ibaraki, JP;
Hisashi Minemoto, Hirakata, JP;
Isao Kidoguchi, Kawanishi, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Katano, JP;
Fumio Kawamura, Minoh, JP;
Masanori Morishita, Ibaraki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Yusuke MORI, Osaka, JP;
Abstract
The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In a method of manufacturing GaN crystals in which in a gas atmosphere containing nitrogen, gallium and the nitrogen are allowed to react with each other to generate GaN crystals in a mixed melt of the gallium and sodium, the gallium and the nitrogen are allowed to react with each other under a pressurizing condition that exceeds atmospheric pressure, and pressure P(atm(×1.013×10Pa)) of the pressurizing condition is set so as to satisfy the condition that is expressed by the following conditional expression (I):<(+45),  (I)where in the expression (I), P (atm(×1.013×10Pa)) denotes the minimum pressure that is required for generating GaN crystals at a temperature T° C. of the mixed melt.