The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2007

Filed:

Jun. 27, 2005
Applicants:

Jin-sung Park, Gyeonggi-do, KR;

Myong-jae Kim, Gyeonggi-do, KR;

Seung-keun Lee, Gyeonggi-do, KR;

Inventors:

Jin-Sung Park, Gyeonggi-do, KR;

Myong-Jae Kim, Gyeonggi-do, KR;

Seung-Keun Lee, Gyeonggi-do, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 8/00 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention disclosed herein is a non-volatile memory device. The non-volatile memory device comprises: a first transistor connected between a first voltage and a control node, and controlled by a second voltage; a second transistor connected between the first voltage and the control node, and controlled by a third voltage, and a word line driver for driving a word line in responsive to a voltage of the control node. The second voltage is set to a ground voltage during an erase operation. The third voltage is set to a power voltage during the erase operation.


Find Patent Forward Citations

Loading…