The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2007
Filed:
Sep. 30, 2004
Joon-seop Kwak, Gyeonggi-do, KR;
Tae-yeon Seong, Gwangju-si, KR;
Ok-hyun Nam, Seoul, KR;
June-o Song, Gwangju-si, KR;
Dong-seok Leem, Gwangju-si, KR;
Joon-seop Kwak, Gyeonggi-do, KR;
Tae-yeon Seong, Gwangju-si, KR;
Ok-hyun Nam, Seoul, KR;
June-o Song, Gwangju-si, KR;
Dong-seok Leem, Gwangju-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Gwangju Institute of Science and Technology, Buk-gu, Gwangju-si, KR;
Abstract
Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.