The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2007

Filed:

Jul. 15, 2005
Applicants:

Yasuto Sumi, Kawasaki, JP;

Koichi Endo, Tokyo, JP;

Inventors:

Yasuto Sumi, Kawasaki, JP;

Koichi Endo, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device comprises: a semiconductor layer of a first conductivity type; a first semiconductor region of a second conductivity type provided on the semiconductor layer, the first semiconductor region being one of an anode region and a cathode region; a second semiconductor region of the first conductivity type provided on the first semiconductor region, the second semiconductor region being the other of the anode region and the cathode region; and a semiconductor buried region of the second conductivity type provided between the semiconductor layer and the first semiconductor region. The semiconductor buried region has an aperture where the first semiconductor region is in contact with the semiconductor layer.


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