The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2007
Filed:
Feb. 20, 2004
Hai-zhi Song, Kawasaki, JP;
Hai-Zhi Song, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The quantum semiconductor device comprises a first semiconductor layeron a substratewith a two-dimensional carrier gas formed in; a quantum dotformed on the first semiconductor layer; a second semiconductor layerformed on the first semiconductor layer, covering the quantum dot; a dot-shaped structureformed on the surface of the second semiconductor layerat the position above the quantum dot; and an oxide layerformed on the surface of the second semiconductor layeron both sides of the dot-shaped structure. The crystal strains generated in the surface of the semiconductor layerdue to the presence of the quantum dotcauses the dot-shaped structureto grow on the semiconductor layersurface at the position which is accurately above the quantum dot. This permits the oxide layerto be formed with the dot-shaped structureas a mark, and the source/drain regionscan be formed with the oxide layeras a mark. Thus, even in a case that the self-assembled fine quantum dotis buried in the semiconductor layer, the quantum semiconductor device can be formed without failure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile