Method for producing solid-state imaging device

Abstract

A method is provided for producing a solid-state imaging device in which a plurality of pixels are arranged two-dimensionally so as to form a photosensitive region, each of the pixels including a photodiode that photoelectrically converts incident light to store a signal charge and read-out elements for reading out the signal charge from the photodiode, and a vertical driving circuit for driving the plurality of pixels in the photosensitive region in a row direction, a horizontal driving circuit for driving the same in a column direction and an amplify circuit for amplifying an output signal are formed with MOS transistors. The method includes: forming an element isolation region with a STI (Shallow Trench Isolation) structure between the plurality of photodiodes and the plurality of MOS transistors; and forming a gate oxide film of the MOS transistors to have a thickness of 10 nm or less. All of heat treatment processes after formation of gates of the MOS transistors are performed at a temperature range that does not exceed 900° C. In a MOS-type solid-state imaging device having a fine structure, the occurrence of image defects can be suppressed sufficiently.