The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2007
Filed:
Jan. 10, 2006
Takeshi Tachibana, Kobe, JP;
Kazushi Hayashi, Kobe, JP;
Yoshihiro Yokota, Kobe, JP;
Koji Kobashi, Kobe, JP;
Takashi Kobori, Kobe, JP;
Takeshi Tachibana, Kobe, JP;
Kazushi Hayashi, Kobe, JP;
Yoshihiro Yokota, Kobe, JP;
Koji Kobashi, Kobe, JP;
Takashi Kobori, Kobe, JP;
Kabushiki Kaisha Kobe Seiko Sho, Hyogo, JP;
Abstract
A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on one principal surface of a first silicon substrate by a CVD method. A SiOlayer is formed on this diamond layer. A SiOlayer is formed on a surface of a second silicon substrate by a thermal oxidation method. The diamond layer is bonded to the second silicon substrate with SiOlayers disposed on both the diamond layer and the second silicon substrate therebetween. The first silicon substrate is removed by dissolution through etching to expose the surface of the diamond layer. A silicon layer serving as a semiconductor layer is formed on the diamond layer by a CVD method.