The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2007
Filed:
Aug. 17, 2004
Hiroshi Nakatsu, Tenri, JP;
Takahisa Kurahashi, Kashiba, JP;
Tetsuroh Murakami, Tenri, JP;
Shouichi Ooyama, Ikoma-gun, JP;
Hiroshi Nakatsu, Tenri, JP;
Takahisa Kurahashi, Kashiba, JP;
Tetsuroh Murakami, Tenri, JP;
Shouichi Ooyama, Ikoma-gun, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an AlGaAs layer and the active layer, in this order. Part of the AlGaAs layer with respect to the is changed into an AlOlayer (where y is a positive real number).