The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2007
Filed:
Mar. 15, 2005
Toshiyuki Matsui, Nagano, JP;
Yasuyuki Hoshi, Nagano, JP;
Yasuyuki Kobayashi, Nagano, JP;
Yasushi Miyasaka, Nagano, JP;
Toshiyuki Matsui, Nagano, JP;
Yasuyuki Hoshi, Nagano, JP;
Yasuyuki Kobayashi, Nagano, JP;
Yasushi Miyasaka, Nagano, JP;
Abstract
A semiconductor device has an n-semiconductor layer and p-diffusion regions each having a depth of 14 to 20 μm (design value) selectively formed in the nsemiconductor layer. With the entire surface of the chip irradiated with light ions, such as He ions, a lifetime killer is introduced from a position dshallower than a position dof a p-n junction surface, formed from the n-semiconductor layer and the p-diffusion regions, to a position ddeeper than the position dto form a short-lifetime region over the entire chip. The irradiation is carried out so that the light ion irradiation half width is not more than the depth of the p-diffusion regions and a position of a peak of the light ions becomes deeper than the light ion irradiation half width and within the range between 80% and 120% of the depth of the p-diffusion regions. Thus, in a semiconductor device such as a converter diode, a capability for a high decay rate of a reverse recovery current di/dt can be brought sufficiently high to such an extent that the device can withstand a lightening surge with a low forward voltage VF being kept low.