The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2007
Filed:
Jul. 06, 2006
Shinji Kunori, Saitama, JP;
Hiroaki Shishido, Saitama, JP;
Masato Mikawa, Saitama, JP;
Kosuke Ohshima, Saitama, JP;
Masahiro Kuriyama, Saitama, JP;
Mizue Kitada, Saitama, JP;
Shinji Kunori, Saitama, JP;
Hiroaki Shishido, Saitama, JP;
Masato Mikawa, Saitama, JP;
Kosuke Ohshima, Saitama, JP;
Masahiro Kuriyama, Saitama, JP;
Mizue Kitada, Saitama, JP;
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device having high ruggedness is provided. The distance Wmbetween buried regions, positioned at the bottoms of different base diffusion regions and face each other, is set smaller than the distance Wmbetween buried regions positioned at the bottom of the same base diffusion region (Wm>Wm). An avalanche breakdown occurs under the bottom of the base diffusion region, and the avalanche current is not passed through a high resistance part immediately under the source diffusion region in the base diffusion region, thereby providing high withstand strength against destruction.