The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2007
Filed:
Jun. 04, 2004
Saichirou Kaneko, Kyoto, JP;
Saichirou Kaneko, Kyoto, JP;
Nissan Motor Co., Ltd., Kanagawa-Ken, JP;
Abstract
A silicon carbide semiconductor device is provided with a semiconductor substrate () of silicon carbide of a first conductivity type, a hetero semiconductor region () forming a hetero-junction with the semiconductor substrate (), an insulated gate including a gate electrode () and a gate insulator layer () formed on the semiconductor substrate () and adjoining to the hetero semiconductor region (), a source electrode () electrically connected to the hetero semiconductor region () and a drain electrode () electrically connected to the semiconductor substrate ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile