The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2007
Filed:
Nov. 07, 2003
Michael Lee Millard, Cincinnati, OH (US);
Horace Richardson, Jr., Cincinnati, OH (US);
Joseph Anthony Corrado, Cincinnati, OH (US);
Michael Lee Millard, Cincinnati, OH (US);
Horace Richardson, Jr., Cincinnati, OH (US);
Joseph Anthony Corrado, Cincinnati, OH (US);
General Electric Company, Schenectady, NY (US);
Abstract
The present invention is an integral composite structural (ICS) material comprising an open metal structure having at least one external side and internal surfaces defining a plurality of open shapes with a ceramic matrix composite bonded to at least one external side and the surfaces of at least a substantial portion of the plurality of open shapes and occupying at least a substantial portion of the plurality of open shapes. The open metal structure, independent of the ceramic matrix composite, has a total metal volume percent in the range of about 10% to about 90%, with no dimension of any open shape being greater than about ¾ inch. The ceramic matrix layer covers a substantial portion of at least one external side of the open metal structure. At least one external side of the metal portion of the ICS material is bonded with a ceramic matrix composite such that the ceramic layer occupies at least a significant portion of the open pores of the metal portion and is bonded to a significant portion of at least one external side of the metal element. The present invention is also a method of manufacturing such an ICS material.