The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Sep. 09, 2005
Hugh Sungki O, Fremont, CA (US);
Chih-ching Shih, Pleasanton, CA (US);
Cheng-hsiung Huang, Cupertino, CA (US);
Yow-juang (Bill) Liu, San Jose, CA (US);
Hugh Sungki O, Fremont, CA (US);
Chih-Ching Shih, Pleasanton, CA (US);
Cheng-Hsiung Huang, Cupertino, CA (US);
Yow-Juang (Bill) Liu, San Jose, CA (US);
Altera Corporation, San Jose, CA (US);
Abstract
A voltage converter includes a first N-channel MOSFET transistor, an inverter, a plurality of serially-connected diodes and a second N-channel MOSFET transistor. The inverter is coupled to the gate of the first N-channel MOSFET transistor to turn on/off the voltage converter. The anode of the diodes is coupled to the source of the first N-channel MOSFET transistor and the cathode of the diodes are coupled to the drain of the second N-channel MOSFET transistor. Since the source of the second N-channel MOSFET transistor is ground, the voltage clamped at the source of the first N-channel MOSFET transistor is not higher than 3.4V when a high voltage applied to the gate of the second N-channel MOSFET transistor turns it on.