The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2007

Filed:

Sep. 14, 2005
Applicant:

Masanori Miyagi, Chiba, JP;

Inventor:

Masanori Miyagi, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); H03K 19/20 (2006.01); H03K 19/0175 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor integrated circuit device has an electrically rewritable non-volatile memory that operates with a first power supply, and a second circuit that operates with a second power supply having a voltage lower than the voltage of the first power supply. The second circuit has a gate oxide film which is thinner than the gate oxide file of the electrically rewritable non-volatile memory. A depletion NMOS transistor has a gate connected to the second power supply, a gate oxide film whose thickness is the same as that of the gate oxide film of the electrically rewritable non-volatile memory, and transmits a signal from an output terminal of the electrically rewritable non-volatile memory to an input terminal of the second circuit.


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