The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Dec. 13, 2004
Greg Scott, Inkom, ID (US);
J. Marcos Laraia, Pocatello, ID (US);
Greg Scott, Inkom, ID (US);
J. Marcos Laraia, Pocatello, ID (US);
AMI Semiconductor, Inc., Pocatello, ID (US);
Abstract
A double-sided extended drain field effect transistor that includes a gate terminal overlying a channel region in a substrate. The substrate includes a drain region of a first carrier type that is laterally separated from the channel region by a first RESURF region of the first carrier type, and a source region of the first carrier type that is laterally separated from the channel region by a second RESURF region of the first carrier type. Regions of the first carrier type may also be disposed laterally adjacent to the source and drain regions on the opposite lateral side as compared to the RESURF regions. This configuration improves the reverse bias breakdown voltage of the transistor.