The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Feb. 15, 2006
Yoshiharu Kanegae, Hitachinaka, JP;
Tomio Iwasaki, Tsukuba, JP;
Yoshiharu Kanegae, Hitachinaka, JP;
Tomio Iwasaki, Tsukuba, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
There is provided a high-reliability nano-dots memory by forming the nano dots uniformly. Also, there is provided the high-speed and high-reliability nano-dots memory by employing a silicon-oxide-film alternative material as a tunnel insulating film. The nano-dots memory includes the tunnel insulating film and silicide nano-dots of CoSior NiSi. Here, the tunnel insulating film is formed by epitaxially growing a high-permittivity insulating film of HfO, ZrOor CeOon a silicon or germanium substrate, or preferably, on a silicon or germanium () substrate. Also, the silicide nano-dots are formed on the tunnel insulating film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile