The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Dec. 02, 2004
Bernard Bechevet, Claix, FR;
Pierre Gaud, Coublevie, FR;
Veronique Sousa, Grenoble, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
The storage medium comprises an array of memory cells () which can be addressed by first () and second () conductors. Each memory cell () comprises one zone () of an active layer () which is initially electrically insulating and which can be made electrically conductive by means of localized plastic deformation (), such as to selectively connect the first () and second () associated conductors. Binary information stored in the memory cell () is determined by the electrical conducting state of the corresponding zone () of the active layer (). The active layer () can be formed using a charged resin. The medium production method comprises assembly of a blank storage medium having an active layer () which is in the initial insulating state, production of a stamping die having a stamping pattern that corresponds to the information to be stored, and stamping of the storage medium using the stamping die.