The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Dec. 17, 2004
Seung Cheol Lee, Ichon-Shi, KR;
Seung Cheol Lee, Ichon-Shi, KR;
Hynix Semiconductor Inc., Kyungki-do, KR;
Abstract
Disclosed herein are methods for forming wall oxide films in flash memory devices and methods for forming isolation films. After trenches are formed in the substrate, an ISSG (In-Situ Steam Generation) oxidization process is performed to form wall oxide films on sidewalls of the trenches. This process prohibits formation of facets at the top and bottom edge portions of the trenches. Thus, the top edges of the trenches are rounded. Furthermore, the ISSG oxidization process is performed at a low temperature for a relatively short time. Therefore, thermal stress due to carrying out an oxidization process for a long time is reduced and a dislocation phenomenon is thus prevented from occurring.