The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Jan. 10, 2005
Applicants:
Yasushi Sakuma, Tokyo, JP;
Katsuya Motoda, Yokohama, JP;
Kenji Uchida, Yokohama, JP;
Ryu Washino, Chigasaki, JP;
Inventors:
Yasushi Sakuma, Tokyo, JP;
Katsuya Motoda, Yokohama, JP;
Kenji Uchida, Yokohama, JP;
Ryu Washino, Chigasaki, JP;
Assignee:
OpNext Japan, Inc., Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a dry etching step for an organic material film, a fluorine-containing member is disposed to the periphery of a semiconductor substrate disposed on a lower electrode or a tray for wafer transportation to form fluorine (fluoro-radicals) from the member per se in addition to the fluoric gas added to the etching gas, with a purpose of removing reaction products, thereby removing reaction products deposited on the semiconductor substrate efficiently and stably.