The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Sep. 11, 2006
Nobuhiko Hayashi, Osaka, JP;
Tatsuya Kunisato, Takatsuki, JP;
Hiroki Ohbo, Hirakata, JP;
Tsutomu Yamaguchi, Nara, JP;
Nobuhiko Hayashi, Osaka, JP;
Tatsuya Kunisato, Takatsuki, JP;
Hiroki Ohbo, Hirakata, JP;
Tsutomu Yamaguchi, Nara, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A nitride-based semiconductor element having excellent element characteristics is obtained by forming a nitride-based semiconductor layer having excellent crystallinity without performing a long etching process. This nitride-based semiconductor element and the method thereof includes forming a mask layer having a recess portion on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer. A nitride-based semiconductor layer is laterally grown on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer. Thus, the strain of the laterally grown nitride-based semiconductor layer is so relaxed that the crystallinity of the nitride-based semiconductor layer is improved.